Dual-mode frequency multiplier in graphene-base hot electron transistor

Area of Science:

• Quantum Computing
• Materials Science
• Electronics Engineering

Background:

• The increasing global adoption of quantum computers necessitates the development of temperature-independent quantum components.
• Cryogenic complementary metal-oxide-semiconductors (cryo-CMOS) are one approach, but 2D material-based quantum tunneling devices offer an alternative.
• Efficient, low-power quantum components are crucial for mature quantum products.

Purpose of the Study:

• To investigate the potential of vertical graphene-based quantum tunneling transistors as frequency modulators.
• To explore the device's operation via quantum tunneling mechanisms.
• To demonstrate frequency multiplication capabilities for quantum electronic applications.

Main Methods:

• Fabrication and characterization of a vertical graphene-based quantum tunneling transistor.
• Application of bias voltages to observe voltage-resistance characteristics.
• Experimental demonstration of frequency modulation using input signals from 100 kHz to 10 MHz.

Main Results:

• The graphene tunneling transistor exhibited variable nonlinear resistance based on applied bias.
• Successful experimental demonstration of frequency modulation across a wide frequency range (100 kHz–10 MHz).
• The single transistor acted as a tunable frequency doubler or tripler.

Conclusions:

• Graphene-based quantum tunneling devices show promise for frequency electronics in quantum technologies.
• The demonstrated frequency multiplication via quantum tunneling offers a novel approach.
• This technology presents a low-power, high-efficiency alternative for quantum component development.