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CMOS-compatible ising machines built using bistable latches coupled through ferroelectric transistor arrays.
Antik Mallick1, Zijian Zhao2, Mohammad Khairul Bashar1
1Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA, 22904, USA.
Scientific Reports
|January 27, 2023
Summary
This study introduces a new Ising machine design using CMOS-latches and ferroelectric FETs. This approach enhances scalability and CMOS compatibility for accelerating complex computational problems.
Area of Science:
- Spintronics and Neuromorphic Computing
- Solid-State Devices and Circuit Design
Background:
- Compact and scalable Ising machines are essential for accelerating intractable computational problems.
- Current Ising machine designs face scalability challenges, particularly in implementing spin coupling networks compatible with CMOS technology.
Purpose of the Study:
- To propose a novel Ising machine platform leveraging CMOS-compatible components for enhanced scalability.
- To address the bottleneck in spin-spin interaction implementation for Ising machines.
Main Methods:
- Utilizing compact bi-stable CMOS-latches as classical Ising spins.
- Employing ferroelectric-HfO2-based Ferroelectric FETs (FeFETs) as scalable coupling elements.
- Experimental demonstration of prototype building blocks and simulation-based evaluation of scaling behavior.
Main Results:
- Successful experimental demonstration of the proposed Ising machine's fundamental components.
- Evaluation of the system's scaling potential through simulations, indicating promising scalability.
- Validation of CMOS-process compatibility for both spin and coupling elements.
Conclusions:
- The proposed Ising machine platform offers a viable pathway towards CMOS-compatible designs.
- The use of FeFETs as coupling elements effectively overcomes scalability challenges in Ising machines.
- This work paves the way for practical, large-scale Ising hardware acceleration.
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