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Updated: Aug 12, 2025

Resonance Raman Spectroscopy of Extreme Nanowires and Other 1D Systems
Published on: April 28, 2016
Revealing the anisotropic phonon behaviours of layered SnS by angle/temperature-dependent Raman spectroscopy
Xiangnan Gong1, Ting Yan2, Jue Li2
1Analytical and Testing Center, Chongqing University Chongqing 401331 China carefen82082022@163.com.
Abstract:
Tin sulfide (SnS), a IV-VI group layered compound, has attracted much attention because of its excellent thermoelectric properties along the crystallographic b-axis. However, there are few reports on the identification of its in-plane orientation. We observe a strong anisotropy of the in-plane Raman signal in bulk SnS. With the help of ab initio calculations, the vibrational symmetry of each observed Raman mode in the cleaved (00l)-plane is consistent with the experimental values. The angle-resolved polarized Raman spectroscopy, combined with electron backscattered diffraction technology, is utilized to systematically investigate the in-plane anisotropy of the phonon response and then determine the in-plane orientation. Furthermore, the temperature-dependent and laser-power-dependent Raman scattering analyses reveal that the adjacent layers in the SnS crystals show a relatively weak van der Waals interaction. These findings could provide much-needed experimental information for future applications related to the anisotropic transport properties of SnS single crystals.
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