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Updated: Aug 12, 2025
Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing
Published on: June 9, 2023
Extended Oxygen Octahedral Tilt Proximity near Oxide Heterostructures
Junsik Mun1,2, Eun Kyo Ko1,3, Baekjune Kang4
1Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul08826, Republic of Korea.
Abstract:
The oxide interfaces between materials with different structural symmetries have been actively studied due to their novel physical properties. However, the investigation of intriguing interfacial phenomena caused by the oxygen octahedral tilt (OOT) proximity effect has not been fully exploited, as there is still no clear understanding of what determines the proximity length and what the underlying control mechanism is. Here, we achieved scalability of the OOT proximity effect in SrRuO3 (SRO) by epitaxial strain near the SRO/SrTiO3 heterointerface. We demonstrated that the OOT proximity length scale of SRO is extended from 4 unit cells to 14 unit cells by employing advanced scanning transmission electron microscopy. We also suggest that this variation may originate from changes in phonon dispersions due to electron-phonon coupling in SRO. This study will provide in-depth insights into the structural gradients of correlated systems and facilitate potential device applications.
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