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Updated: Aug 12, 2025
Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model
Published on: May 23, 2018
Amorphous Mixed-Vanadium-Tungsten Oxide Films as Optically Passive Ion Storage Materials for Solid-State
Junyi Wang1,2,3,4, Yurong Zhou1, Wuxi Zhao1
1Fujian Key Laboratory of Surface and Interface Engineering for High Performance Materials, College of Materials, Xiamen University, 422 Siming South Road, Xiamen, Fujian 361005, China.
Abstract:
Near infrared (NIR) electrochromic (EC) devices that selectively modulate the NIR light without affecting the daylight represent a promising window technology for saving energy consumption of buildings. Current research efforts have been focused on developing NIR-EC materials, while little attention has been directed to the optically passive ion storage materials that are crucial for balancing charges in a full NIR-EC device. Herein, we report that amorphous phase mixed-vanadium-tungsten oxide films exhibit minimum optical change with high ion storage capacity, which enables the usage of the mixed-metal oxides as optically passive counter electrode materials for NIR-EC devices. The mixed-vanadium-tungsten oxide films are synthesized by a room-temperature solution-based photodeposition method that allows us to precisely engineer the metal compositions and thicknesses of the mixed-metal oxide films, thus optimizing their optical inertness and ion storage capability. A solid-state NIR-EC device assembled with the mixed-vanadium-tungsten oxide film as an ion storage layer and the amorphous tungsten oxide hydrate as the NIR-EC layer shows fast response speed with cycling stability up to 10,000 cycles, proving the outstanding charge balancing capability of mixed-metal oxide. Our work provides an efficient strategy for developing optically passive ion storage films with high ion storage capability for high-performance EC devices.
