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Published on: May 13, 2020
Electrochemical Resistive Switching in Nanoporous Hybrid Films by One-Step Molecular Layer Deposition
Jin Lei1, Song Sun1, Yuchen Li2
1National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, P. R. China.
Abstract:
An organic-inorganic hybrid resistive random-access memory based on a nanoporous zinc-based hydroquinone (Zn-HQ) thin film has been constructed with a Pt/Zn-HQ/Ag sandwich structure. The porous Zn-HQ functional layer was directly fabricated by a one-step molecular layer deposition. These Pt/Zn-HQ/Ag devices show a typical electroforming-free bipolar resistive switching characteristic with lower operation voltages and higher on/off ratio above 102. Our nanoporous hybrid devices can also realize multilevel storage capability and exhibit excellent endurance/retention properties. The connection and disconnection of Ag conductive filaments in nanoporous Zn-HQ thin film follow the electrochemical metallization mechanism. Our computational simulations confirm that the existence of nanopores in Zn-HQ thin films facilitates the Ag filament formation, contributing to the high performance of our hybrid devices.
