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Terminal Atom-Controlled Etching of 2D-TMDs.

Ziwei Huang1, Wei Deng1, Zhengwei Zhang2

  • 1Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China.

Advanced Materials (Deerfield Beach, Fla.)
|February 5, 2023
PubMed
Summary

Researchers developed a new method to control the edge atoms of etched holes in 2D transition metal dichalcogenides (2D-TMDs). This technique allows for precise patterning of 2D materials, crucial for advanced electronic and catalytic applications.

Keywords:
etched hole arraysrapid thermal etchingterminal atom-controlledtwo-dimensional transition metal dichalcogenides

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Area of Science:

  • Materials Science
  • Surface Science
  • Nanotechnology

Background:

  • Controlled etching of 2D transition metal dichalcogenides (2D-TMDs) is essential for understanding 2D material growth and for precise patterning.
  • Achieving control over the terminal atoms of etched features in 2D-TMDs presents a significant challenge in materials fabrication.

Purpose of the Study:

  • To report a novel strategy for controlling the terminal atoms of etched holes in 2D-TMDs.
  • To demonstrate the creation of terminal atom-controlled etched hole arrays on 2D-TMDs using a combination of laser irradiation and anisotropic thermal etching.

Main Methods:

  • Utilized laser irradiation coupled with an enhanced anisotropic thermal etching process.
  • Adjusted the gas atmosphere (Ar/H2, pure Ar, Ar/sulfur or selenium vapor) during thermal etching to influence the etching outcome.
  • Employed density functional theory (DFT) calculations to investigate edge formation energies and atomic activities under different atmospheric conditions.

Main Results:

  • Successfully fabricated terminal atom-controlled etched hole arrays on 2D-TMDs.
  • Achieved triangular etched holes terminated by tungsten (W-ZZ) edges in Ar/H2.
  • Produced hexagonal etched holes with alternating W-ZZ and sulfur/selenium (S-ZZ/Se-ZZ) edges in pure Ar.
  • Obtained triangular etched holes terminated by S-ZZ/Se-ZZ edges in Ar/sulfur or selenium vapor.

Conclusions:

  • The study provides a rational strategy to control the terminal atoms of etched holes in 2D-TMDs by manipulating the etching atmosphere.
  • DFT analysis confirms that differing atomic activities and formation energies dictate the resulting edge terminations.
  • The developed 2D-TMDs hole arrays hold potential for applications in catalysis, nonlinear optics, spintronics, and integrated circuits.