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Funnel Devices Based on Asymmetrically Strained Transition Metal Dichalcogenides.

Myung Uk Park1, Myeongjin Kim1, Sung Hyun Kim1

  • 1Department of Physics, Yonsei University, 50 Yonsei-ro, Seoul, 03722, Republic of Korea.

Advanced Materials (Deerfield Beach, Fla.)
|February 7, 2023
PubMed
Summary
This summary is machine-generated.

Strain engineering in transition metal dichalcogenides (TMDs) creates funnel-like band structures, guiding excitons for potential electrical conversion. This study demonstrates strain-tunable photocurrents in asymmetric TMD devices, showing material-dependent Schottky barrier effects.

Keywords:
SU-8 microstructureasymmetric strain engineeringfunnel effectshort-circuit currentstransition-metal dichalcogenides

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Strain engineering in transition metal dichalcogenides (TMDs) is known to modify their electronic properties, including bandgap reduction.
  • Local strain gradients can induce unique band structures, such as funnels, that direct charge carriers or excitons.
  • Understanding exciton behavior under strain is crucial for developing novel optoelectronic devices.

Purpose of the Study:

  • To design and fabricate a funnel device utilizing asymmetrically strained tungsten disulfide (WS₂) and molybdenum disulfide (MoS₂).
  • To investigate the conversion of strain-guided excitons into electrical currents within these devices.
  • To analyze the impact of asymmetric strain and electrode choice on device performance, specifically short-circuit current (ISC).

Main Methods:

  • Inducing asymmetric strain in WS₂ and MoS₂ flakes by transferring them onto a fork-shaped SU-8 microstructure.
  • Characterizing strain application using Raman and photoluminescence spectroscopy, observing peak shifts correlated with microstructure morphology.
  • Fabricating devices with symmetric and asymmetric electrodes (Au, Al) on strained TMDs to study photocurrent generation.
  • Performing scanning photocurrent mapping to visualize current flow patterns and correlate them with the strained microstructure.

Main Results:

  • Raman and photoluminescence spectra confirmed the successful application of asymmetric strains to WS₂ and MoS₂.
  • Scanning photocurrent mapping revealed fork-shaped patterns, indicating the conversion of funneled excitons into electrical currents.
  • For WS₂, strain enhanced the short-circuit current (ISC) in devices with asymmetric electrodes.
  • For MoS₂, strain suppressed ISC due to strain-induced lowering of the Schottky barrier with increasing strain.

Conclusions:

  • Asymmetrically strained TMDs can be effectively implemented in funnel devices for photocurrent generation.
  • The effect of strain on the Schottky barrier and subsequent device performance is highly dependent on the specific TMD material.
  • This work highlights the potential for strain engineering in TMDs to tune optoelectronic properties for advanced device applications.