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Updated: Aug 11, 2025

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology
Published on: December 7, 2015
Spatially Resolved Potential Distribution in Carbon Nanotube Cross-Junction Devices
Eduardo J H Lee1, Kannan Balasubramanian1, Marko Burghard1
1Max Planck Institute for Solid State Research Heisenbergstrasse 1 70569 Stuttgart (Germany).
Abstract:
Crossed-nanotube junctions, the basic constituents of carbon nanotube networks, are investigated by scanning photocurrent microscopy. The location of the predominant electrostatic potential drop, at the electrical contacts or at the junction, is found to be highly dependent on the transport regime. Also, whereas Schottky barriers are formed at M-S (metal-semiconductor) nanotube crossings, isotype heterojunctions are formed at S-S ones (figure).
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