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Updated: Aug 10, 2025

Carrier Lifetime Measurements in Semiconductors through the Microwave Photoconductivity Decay Method
Published on: April 18, 2019
Decay processes of long-lived phonons in 6H-SiC
D A Pshenay-Severin1,2, R B Adamov1, M Ya Vinnichenko1
1Institute of Electronics and Telecommunications, Peter the Great St. Petersburg Polytechnic University, 29 Polytechnicheskaya str., St. Petersburg 195251, Russia.
Abstract:
Temperature evolution of the high-resolution far-infrared transmission spectra of 6H-SiC single crystal slab is experimentally examined in a temperature range of 5-320 K. Temperature dependences of the phonon lifetimes for long-lived phonons, namely the IR active folded transverse acoustic (FTA) phonon doublet, are determined. These dependences are interpreted in the framework of a theoretical model developed using first principle anharmonic lattice dynamics. It is shown that three-phonon anharmonic processes dominate in the FTA phonon decay at temperatures above 160 K resulting in a rapid decrease of the phonon lifetimes with increasing temperature. Contribution of four-phonon anharmonic processes is negligibly small at temperatures below 320 K.
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