High Ampacity On-Chip Wires Implemented by Aligned Carbon Nanotube-Cu Composite

With the size of electronic devices shrinking to the nanometer scale, it is of great importance to develope new wire materials with higher current carrying capacity than traditional materials such as gold (Au) and copper (Cu). This is urgently needed for more efficient, compact and functional integrated chips and microsystems. To meet the needs of an atom chip, here we report a new solution by introducing super-aligned carbon nanotubes (SACNTs) into Cu thin films. The microwires exhibit an ultra-high current carrying capacity beyond the limit of the traditional Cu wires, reaching (1.7~2.6) × 10⁷ A·cm^-2. The first-principles calculation is used to obtain the band structural characteristics of the CNT-Cu composite material, and the principle of its I-V characteristic curve is analyzed. Driven by the bias voltage, a large number of carriers are injected into the CNT layer from Cu by the strong tunneling effect. Moreover, a variety of microwires can be designed and fabricated on demand for high compatibility with conventional microelectronics technology. The composite structures have great potential in high-power electronic devices, high-performance on-chip interconnecting, as well as other applications that have long-term high-current demands, in addition to atom chips.