Short-Term Memory Characteristics of IGZO-Based Three-Terminal Devices

Area of Science:

• Materials Science
• Neuroscience
• Electrical Engineering

Background:

• Traditional two-terminal synaptic devices offer limited controllability for neuromorphic systems.
• Three-terminal synaptic transistors provide enhanced precision for mimicking biological synapses.
• Indium Gallium Zinc Oxide (IGZO) is a promising material for advanced electronic devices.

Purpose of the Study:

• To fabricate and characterize IGZO-based three-terminal synaptic transistors.
• To demonstrate synaptic operations and short-term memory behaviors in these devices.
• To evaluate the potential of these transistors for hardware-oriented neuromorphic systems.

Main Methods:

• Fabrication of IGZO-based three-terminal devices incorporating HfAlOx and CeOx layers.
• Characterization of chemical composition and thickness using transmission electron microscopy (TEM) and energy dispersive spectroscopy (EDS).
• Evaluation of synaptic functions including excitatory post-synaptic current (EPSC), paired-pulse facilitation (PPF), short-term potentiation (STP), and short-term depression (STD).

Main Results:

• Successful fabrication of IGZO-based three-terminal synaptic transistors.
• Demonstration of key synaptic operations (EPSC, PPF, STP, STD) indicative of short-term memory.
• Device performance showed appropriate control via pulse amplitude, width, and interval time.

Conclusions:

• IGZO-based three-terminal synaptic transistors effectively emulate short-term synaptic plasticity.
• These devices offer superior controllability compared to two-terminal counterparts.
• The developed transistors are suitable for implementation in advanced neuromorphic systems.