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Published on: February 10, 2014
Study on the Simulation of Biosensors Based on Stacked Source Trench Gate TFET
Chen Chong1, Hongxia Liu1, Shougang Du1
1Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education Ministry, School of Microelectronics, Xidian University, Xi'an 710071, China.
Abstract:
In order to detect biomolecules, a biosensor based on a dielectric-modulated stacked source trench gate tunnel field effect transistor (DM-SSTGTFET) is proposed. The stacked source structure can simultaneously make the on-state current higher and the off-state current lower. The trench gate structure will increase the tunneling area and tunneling probability. Technology computer-aided design (TCAD) is used for the sensitivity study of the proposed structured biosensor. The results show that the current sensitivity of the DM-SSTGTFET biosensor can be as high as 108, the threshold voltage sensitivity can reach 0.46 V and the subthreshold swing sensitivity can reach 0.8. As a result of its high sensitivity and low power consumption, the proposed biosensor has highly promising prospects.
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