Highly Efficient and Stable Self-Powered Perovskite Photodiode by Cathode-Side Interfacial Passivation with...

Area of Science:

• Opto-electronic devices
• Materials science
• Solid-state physics

Background:

• Organic-inorganic hybrid perovskite materials show promise for opto-electronic applications.
• Perovskite-based photodiodes require efficient charge transport and minimal recombination for high performance.
• Interface defects in perovskite films can lead to increased noise and reduced device stability.

Purpose of the Study:

• To introduce a cathode-side passivation layer of poly(methyl methacrylate) (PMMA) for perovskite photodiodes.
• To enhance the efficiency, stability, and detectivity of self-powered perovskite photodiodes.
• To suppress noise current and interface recombination in CH3NH3PbI3 (MAPbI3) perovskite photodiodes.

Main Methods:

• Fabrication of a CH3NH3PbI3 (MAPbI3) perovskite photodiode with a PMMA passivation layer.
• Implementation of PMMA between the MAPbI3 absorber and the electron transport layer ([6,6]-phenyl-C61-butyric acid methyl ester).
• Characterization of photodiode performance, including specific detectivity, linear dynamic range, and response times.

Main Results:

• The PMMA-passivated photodiode achieved a high specific detectivity of ~1.07 × 10^12 Jones.
• A wide linear dynamic response of ~127 dB was obtained.
• Rapid rise (~50 μs) and decay (~17 μs) response times were observed, along with excellent stability over 500 h.

Conclusions:

• PMMA serves as an effective cathode-side passivation layer for perovskite photodiodes.
• The passivation layer significantly suppresses interface recombination and noise current.
• The developed perovskite photodiodes demonstrate high sensitivity, stability, and rapid response for opto-electronic applications.