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Updated: Aug 10, 2025
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Infrared Degenerate Four-wave Mixing with Upconversion Detection for Quantitative Gas Sensing
Published on: March 22, 2019
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Research on Electro-Optical Characteristics of Infrared Detectors with HgCdTe Operating at Room Temperature
Paweł Madejczyk1, Tetiana Manyk1, Jarosław Rutkowski1
1Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908 Warsaw, Poland.
Sensors (Basel, Switzerland)
|February 11, 2023
Summary
This study analyzes uncooled HgCdTe infrared detectors, comparing experimental data with simulations to understand performance across various wavelengths. Accurate modeling of dark current density is achieved by adjusting recombination parameters.
Area of Science:
- Materials Science
- Semiconductor Physics
- Optoelectronics
Background:
- HgCdTe (Mercury Cadmium Telluride) detectors are crucial for infrared imaging.
- Optimizing detector performance requires understanding complex semiconductor physics.
Purpose of the Study:
- To analyze the current-voltage characteristics of uncooled HgCdTe detectors.
- To compare experimental data with numerical simulations for improved detector design.
Main Methods:
- HgCdTe heterostructures grown via metal-organic chemical vapor deposition (MOCVD).
- Current-voltage measurements using a Keysight B1500A semiconductor device analyzer.
- Numerical simulations using SimuAPSYS (Crosslight) software.
Main Results:
- Experimental dark current density data matched theoretical results at 300 K for short, medium, and long wavelengths.
- Shockley-Read-Hall carrier lifetime and Auger recombination rates were adjusted for accurate modeling.
- Spectral responses, R0A product, and current responsivity were evaluated.
Conclusions:
- SimuAPSYS provides a reliable platform for understanding HgCdTe detector mechanisms.
- Accurate modeling of recombination processes is key to predicting detector performance.
- The study validates the design and simulation approach for optimized HgCdTe infrared detectors.
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