Related Experiment Video
Updated: Aug 10, 2025

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices
Published on: July 11, 2025
Bipolar spin-filtering and giant magnetoresistance effect in spin-semiconducting zigzag graphene nanoribbons
Ziqi Han1,2,3, Hua Hao4, Xiaohong Zheng2,3
1Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, 230031, China.
Abstract:
Spintronics is one of the main topics in condensed matter physics, in which half-metallicity and giant magnetoresistance are two important objects to achieve. In this work, we study the spin dependent transport properties of zigzag graphene nanoribbons (ZGNR) with asymmetric edge hydrogenation and different magnetic configurations using the non-equilibrium Green's function method combined with density functional calculations. Our results show that when the magnetic configurations of the electrodes change from parallel to antiparallel, the currents in the tunnel junction change substantially, resulting in a high conductance state and a low conductance state, with the tunnel magnetoresistance (TMR) ratio larger than 1 × 105% achieved. In addition, in the parallel magnetic configurations, an ideal bipolar spin filtering effect is observed, making it flexible to switch the spin polarity of current by reversing the bias direction. All these features originate from the spin semiconducting behavior of the asymmetrically hydrogenated ZGNRs. The findings suggest that asymmetric edge hydrogenation provides an important way to construct multi-functional spintronic devices with ZGNRs.
More Related Videos
10:36Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials
Published on: January 21, 2016
08:12Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
Related Concept Videos
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Diamagnetism
Diamagnetism was discovered by Anton Brugmans in 1778 when he observed that bismuth gets repelled by magnetic fields, thus theorizing that diamagnets get repelled by magnets....