Uniaxial Strain-Induced Tunable Mid-infrared Light Emission from Thin Film Black Phosphorus

Strain engineering is a powerful tool that can modulate semiconductor device performance. Here, we demonstrate that the bandgap of thin film (∼40 nm) black phosphorus (bP) can be continuously tuned from 2.9 to 3.9 μm by applying an in-plane uniaxial strain, as evidenced by mid-infrared photoluminescence (PL) spectroscopy. The deduced bandgap strain coefficients are ∼103 meV %^-1, which coincide with those obtained in few-layer bP. On the basis of first-principles calculations, the origin of the uniaxial tensile strain-induced PL enhancement is suggested to be due to the increase in both the effective mass ratio (m^*/m^*) and the bandgap, leading to the increment of the radiative efficiency. Moreover, the mid-infrared PL emission remains perfectly linear-polarized along the armchair direction regardless of tensile or compressive strain. The highly tunable bandgap of bP in the mid-infrared regime opens up opportunities for the realization of mid-infrared light-emitting diodes and lasers using layered materials.