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Updated: Aug 9, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

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Performance improvement of a tunnel junction memristor with amorphous insulator film

Fenning Liu1, Yue Peng2, Yan Liu3

  • 1State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, 710071, People's Republic of China.

Discover Nano
|February 22, 2023
PubMed

Keywords:
MemristorOxygen vacancyTJMTunneling electroresistanceTunneling junction

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