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Surface oxygen vacancy engineering on TiO2 (101) via ALD technology for simultaneously enhancing charge separation
Wenbo Wu1, Zhenbo Peng2, Jun Wang1
1College of Material, Chemistry and Chemical Engineering, Hangzhou Normal University, Hangzhou, Zhejiang 311121, P. R. China. gjia@hznu.edu.cn.
Abstract:
Titanium oxide molecular layers containing extensive SOV content (11.4-16.2%) have been constructed on (101) TiO2 nanotubes through a precisely controlled atomic layer deposition technique, in which the charge separation efficiency and surface charge transfer efficiency are increased to 28.2% and 89.0%, respectively, about 17 and 2 times those of the initial TiO2 nanotubes.

