Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOS Capacitor01:25

MOS Capacitor

891
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
891
Dielectric Polarization in a Capacitor01:31

Dielectric Polarization in a Capacitor

4.8K
The presence of a dielectric medium in a capacitor not only changes the voltage and capacitance but also affects the electric field. In general, dielectrics can be of two types: polar and nonpolar. In a polar dielectric, the positive and negative charges in the molecules are separated by a distance and hence have a permanent dipole moment. In contrast, no such charge separation exists in a nonpolar dielectric, however the nonpolar molecules get polarized in the presence of an external electric...
4.8K
Insensitive Nuclei Enhanced by Polarization Transfer (INEPT)01:15

Insensitive Nuclei Enhanced by Polarization Transfer (INEPT)

433
Insensitive Nuclei Enhanced by Polarization Transfer (INEPT) is an advanced Nuclear Magnetic Resonance (NMR) technique specifically designed to detect and enhance the signals of low-abundance nuclei, such as carbon-13 and nitrogen-15, in small molecules. The fundamental principle behind INEPT is the transfer of polarization from a more abundant and highly polarizable nucleus, typically hydrogen-1, to the low-abundance nucleus of interest. This process effectively boosts the NMR signal of the...
433

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Assessing quality standards of biomarker measurement in first-trimester combined screening for preeclampsia in the Chinese population: A multicenter study.

Acta obstetricia et gynecologica Scandinavica·2026
Same author

The role of ABHD2 in cigarette smoke-induced skeletal muscle atrophy in chronic obstructive pulmonary disease mice: The mechanism of ABHD2 in skeletal muscle atrophy.

Experimental lung research·2026
Same author

Quantitative Lipidomics Reveals Dynamic Lipid Profiles in <i>Cinnamomum camphora</i> Seed Kernels at Different Developmental Stages.

Plants (Basel, Switzerland)·2026
Same author

Minimum Inoculum of Resistance Assay for Evaluating Antitoxoplasmosis Compounds That Target Phenylalanine tRNA Synthetase.

ACS infectious diseases·2026
Same author

Targeting CDK4/6 potentiates the efficacy of anti-CD47 therapy via modulating the suppressive function of tumor-associated macrophages.

Apoptosis : an international journal on programmed cell death·2026
Same author

Low Barrier Interface of NiO-Ti<sub>3</sub>C<sub>2</sub>O<sub>2</sub> for Sulfur Hexafluoride Decomposition Gas-Sensing Application: A DFT Study.

Langmuir : the ACS journal of surfaces and colloids·2026

Related Experiment Video

Updated: Aug 9, 2025

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

8.3K

Compact non-volatile ferroelectric electrostatic doping optical memory based on the epsilon-near-zero effect.

Yong Zhang, Lei Li, Han Xie

    Applied Optics
    |February 23, 2023
    PubMed
    Summary

    This study introduces a novel optical memory using ferroelectric doping and the epsilon-near-zero (ENZ) effect for compact, low-energy optoelectronics. The non-volatile device offers efficient optical circuit control with minimal power consumption.

    More Related Videos

    Gradient Echo Quantum Memory in Warm Atomic Vapor
    10:00

    Gradient Echo Quantum Memory in Warm Atomic Vapor

    Published on: November 11, 2013

    12.9K
    In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
    09:49

    In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

    Published on: May 13, 2020

    4.1K

    Related Experiment Videos

    Last Updated: Aug 9, 2025

    A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
    10:40

    A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

    Published on: April 8, 2018

    8.3K
    Gradient Echo Quantum Memory in Warm Atomic Vapor
    10:00

    Gradient Echo Quantum Memory in Warm Atomic Vapor

    Published on: November 11, 2013

    12.9K
    In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
    09:49

    In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

    Published on: May 13, 2020

    4.1K

    Area of Science:

    • Optoelectronics
    • Materials Science
    • Integrated Circuits

    Background:

    • Optoelectronic hybrid integrated circuits face challenges with device footprint and power consumption.
    • Developing compact and energy-efficient photonic devices is crucial for advancing integrated circuits.

    Purpose of the Study:

    • To propose a novel optical readout memory solution.
    • To address the limitations of footprint and power consumption in current photonic devices.

    Main Methods:

    • Utilizing ferroelectric electrostatic doping to achieve the epsilon-near-zero (ENZ) state.
    • Employing residual polarization charges of ferroelectric film to dope indium tin oxide.
    • Leveraging CMOS-compatible processes for device fabrication.

    Main Results:

    • Achieved a significant modulation depth of 10.4 dB.
    • Device length is only 60 µm, demonstrating compactness.
    • Energy consumption is below 1 pJ, indicating extremely low energy usage.

    Conclusions:

    • The proposed optical memory is compact, extremely low-energy, and non-volatile.
    • Ferroelectric doping and ENZ effect offer a promising approach for future optoelectronic integrated circuits.
    • The device's non-volatile nature and low power consumption are significant advantages for optical circuit control.