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Updated: Aug 9, 2025

Single-Digit Nanometer Electron-Beam Lithography with an Aberration-Corrected Scanning Transmission Electron Microscope
Published on: September 14, 2018
Artificial neural networks accurately reconstruct multilayer defect profiles in extreme ultraviolet (EUV) mask blanks. This advancement is crucial for precise mask defect compensation and repair in EUV lithography.
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