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Related Experiment Video

Updated: Aug 9, 2025

Picometer-Precision Atomic Position Tracking through Electron Microscopy
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High-precision FoM measurement setup for Ti:sapphire crystals.

Vojtěch Miller, Karel Žídek

    Applied Optics
    |February 23, 2023
    PubMed
    Summary

    We developed a high-precision method to measure the figure of merit (FoM) for Ti:sapphire (Ti:Sa) crystals, improving precision by over 8x. This allows for detailed analysis of crystal quality and spatial inhomogeneities.

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    Area of Science:

    • Laser physics
    • Materials science
    • Optical engineering

    Background:

    • Ti:sapphire (Ti:Sa) crystals are crucial for tunable lasers, but their quality assessment via figure of merit (FoM) lacks precision.
    • Current FoM measurements using commercial spectrometers yield unsatisfactory precision (±60%), hindering detailed material characterization.

    Purpose of the Study:

    • To develop and validate a high-precision measurement setup for Ti:Sa crystal FoM.
    • To significantly improve the precision of FoM determination compared to existing methods.
    • To investigate the impact of crystal inhomogeneities on FoM values.

    Main Methods:

    • A novel single-pass transmission measurement setup utilizing Nd:YAG and Er:YAG lasers at 532, 780, and 1560 nm.
    • Synchronous detection with a double integrating sphere to achieve low transmission uncertainty (0.01-0.03%).

    Main Results:

    • Achieved a 3σ precision of ±7.5% for FoM measurements, an eightfold improvement over commercial methods.
    • Successfully traced spatial inhomogeneities in an unannealed Ti:Sa crystal from a commercial manufacturer.
    • Demonstrated that crystal inhomogeneities and angular misalignment significantly affect FoM values.

    Conclusions:

    • The developed setup provides unprecedented precision for Ti:Sa crystal FoM assessment.
    • High-precision FoM measurements are essential for identifying and understanding crystal defects and their impact on laser performance.
    • This method enables more rigorous quality control for Ti:Sa crystals used in demanding laser applications.

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