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MOSFET Amplifiers01:17

MOSFET Amplifiers

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The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
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MOSFET: Enhancement Mode01:22

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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
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Design Example: Capacitance Multiplier Circuit01:20

Design Example: Capacitance Multiplier Circuit

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In integrated circuit technology, a capacitance multiplier is often utilized to produce a larger capacitance value when a small physical capacitance falls short. This is achieved by a circuit that multiplies capacitance values by a factor of up to 1000, such that a 10-pF capacitor can replicate the performance of a 100-nF capacitor.
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Small-Signal Analysis of MOSFET Amplifiers01:23

Small-Signal Analysis of MOSFET Amplifiers

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In small-signal analysis, a MOSFET transistor amplifier acts as a linear amplifier when operating in its saturation region. The gate-to-source voltage (VGS) of the MOSFET is the sum of the DC biasing voltage and the small time-varying input signal. This combination sets up the operating point and modulates the drain current (ID) that flows from the drain to the source. When a small AC signal is superimposed on the DC bias voltage at the gate, the instantaneous drain current comprises three...
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Maximum Power Transfer01:16

Maximum Power Transfer

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Numerous practical applications within engineering disciplines, such as telecommunications, necessitate optimizing power delivery to a connected load. This pursuit, however, entails inherent internal losses, which can either equal or exceed the power supplied to the load. The Thevenin equivalent circuit is helpful in finding the maximum power a linear circuit can deliver to a load. It is assumed in this context that the load resistance can be adjusted.
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Cut-off frequencies in Bipolar Junction Transistors (BJTs) mark the transition between the signal's pass band and stop band, influencing their performance in amplifying or attenuating frequencies. These frequencies are crucial for designing BJTs to meet specific operational requirements in electronic circuits.
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CMOS Radio Frequency Energy Harvester (RFEH) with Fully On-Chip Tunable Voltage-Booster for Wideband Sensitivity

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Summary

This study introduces a tunable voltage boosting (TVB) mechanism for radio frequency energy harvesting (RFEH) in CMOS technology. The TVB significantly enhances RFEH sensitivity across a wide bandwidth, improving performance for wireless devices.

Keywords:
5GNRCCDDCMOSradio frequency energy harvestervoltage boostingwideband

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Area of Science:

  • Electrical Engineering
  • Renewable Energy Technologies

Background:

  • Radio frequency energy harvesting (RFEH) is crucial for powering wireless electronic devices, particularly in CMOS technology.
  • Enhancing RFEH sensitivity to low-power ambient RF signals is a key challenge.
  • Existing voltage boosting mechanisms offer limited operational bandwidth.

Purpose of the Study:

  • To implement a novel tunable voltage boosting (TVB) mechanism integrated onto a 3-stage cross-coupled differential drive rectifier (CCDD).
  • To improve the sensitivity and operational bandwidth of CMOS-based RFEH systems.

Main Methods:

  • Development of a fully on-chip TVB mechanism utilizing an interleaved transformer architecture.
  • Integration of the TVB with a CCDD rectifier, where a MOSFET switch tunes the network's inductance.
  • Testing the performance across 5G New Radio frequency (5GNR) bands (3-6 GHz).

Main Results:

  • The TVB mechanism maintains rectifier sensitivity at 1V DC output across a 3-6 GHz bandwidth with minimal deviation (-2 dBm).
  • Achieved a peak power conversion efficiency (PCE) of 83% at 3 GHz with -23 dBm input power.
  • Sustained PCE above 50% at the 1V sensitivity point.

Conclusions:

  • The proposed CCDD-TVB mechanism significantly enhances CMOS RFEH performance.
  • Enables wideband operation with optimized sensitivity, DC output voltage, and efficiency for RFEH applications.