Boosting the Electrostatic MEMS Converter Output Power by Applying Three Effective Performance-Enhancing Techniques

This current study aims to enhance the electrostatic MEMS converter performance mainly by boosting its output power. Three different techniques are applied to accomplish such performance enhancement. Firstly, the power is boosted by scaling up the technology of the converter CMOS accompanied circuit, the power conditioning, and power controlling circuits, from 0.35 µm to 0.6 µm CMOS technology. As the converter area is in the range of mm², there are no restrictions concerning the scaling up of the accompanied converter CMOS circuits. As a result, the maximum voltage of the system for harvesting energy, V, which is the most effective system constraint that greatly affects the converter's output power, increases from 8 V to 30 V. The output power of the designed and simulated converter based on the 0.6 µm technology increases from 2.1 mW to 4.5 mW. Secondly, the converter power increases by optimizing its technological parameters, the converter thickness and the converter finger width and length. Such optimization causes the converter output power to increase from 4.5 mW to 11.2 mW. Finally, the converter structure is optimized to maximize its finger length by using its wasted shuttle mass area which does not contribute to its capacitances and output power. The proposed structure increases the converter output power from 11.2 mW to 14.29 mW. Thus, the three applied performance enhancement techniques boosted the converter output power by 12.19 mW, which is a considerable enhancement in the converter performance. All simulations are carried out using COMSOL Multiphysics 5.4.