Related Experiment Video
Updated: Aug 8, 2025
08:49
Atomically Defined Templates for Epitaxial Growth of Complex Oxide Thin Films
Published on: December 4, 2014
14.4K
Control of Columnar Grain Microstructure in CSD LaNiO3 Films
Aleksandra V Atanova1, Dmitry S Seregin2, Olga M Zhigalina1,3
1Shubnikov Institute of Crystallography of Federal Scientific Research Centre "Crystallography and Photonics", Russian Academy of Sciences, 119333 Moscow, Russia.
Molecules (Basel, Switzerland)
|February 25, 2023
Summary
We developed a new method to create well-defined columnar grain structures in conductive Lanthanum Nickelate (LaNiO3) films. This technique improves film properties for advanced electronics and ferroelectric devices.
Area of Science:
- Materials Science
- Thin Film Deposition
- Nanotechnology
Background:
- Conductive Lanthanum Nickelate (LaNiO3) films are crucial for electronics.
- Achieving a columnar grain structure in Chemical Solution Deposition (CSD) films on amorphous substrates is difficult.
Purpose of the Study:
- To report the formation of a columnar grain structure in LaNiO3 films on Si-SiO2 substrates.
- To control grain structure using layer-by-layer deposition with optimized thermal treatments.
Main Methods:
- Layer-by-layer deposition of LaNiO3 films on Si-SiO2 substrates.
- Controlled soft-baking temperature and high-temperature annealing time for each layer.
- Analysis of film microstructure and electrical properties.
Main Results:
- Successfully formed a columnar grain structure in LaNiO3 films.
- Columnar growth was driven by crystallite coalescence, not substrate nucleation.
- Achieved low resistivity (ρ~700 µOhm·cm) in the films.
- Demonstrated suitability for growing high-quality lead zirconate-titanate (PZT) films.
Conclusions:
- The study provides new insights into controlling columnar grain growth in CSD films.
- The developed method enables the creation of advanced materials for electronic devices.
- This work facilitates the development of novel materials and devices.
