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Electrical and Structural Properties of Si1-Ge Nanowires Prepared from a Single-Source Precursor
Raphael Behrle1, Vanessa Krause2, Michael S Seifner3
1Institute of Solid State Electronics, TU Wien, Gußhausstraße 25-25a, 1040 Vienna, Austria.
Nanomaterials (Basel, Switzerland)
|February 25, 2023
Summary
This study synthesized silicon-germanium (SiGe) nanowires using a single-source precursor, simplifying fabrication. The resulting nanowires exhibit distinct electrical properties depending on whether they have a gold (Au) coating, paving the way for nano- and quantum-electronics.
Area of Science:
- Materials Science
- Nanotechnology
- Semiconductor Physics
Background:
- Silicon-germanium (SiGe) nanowires (NWs) are promising for advanced electronic devices.
- Controlled synthesis of SiGe NWs with tunable properties remains a challenge.
Purpose of the Study:
- To develop a simplified method for synthesizing single-crystalline SiGe nanowires.
- To investigate the electrical properties of SiGe NWs with and without a gold (Au) surface layer.
Main Methods:
- Utilized gold-supported chemical vapor deposition (CVD) with a single-source precursor containing preformed Si-Ge bonds.
- Employed low-pressure CVD for nanowire growth.
- Removed the gold surface layer via oxidation and etching.
Main Results:
- Achieved single-crystalline SiGe nanowires with uniform diameters.
- Identified metal-like electrical behavior in SiGe/Au core-shell nanowires.
- Observed typical intrinsic SiGe semiconductor characteristics in gold-removed nanowires.
Conclusions:
- The single-source precursor approach simplifies SiGe nanowire synthesis.
- Surface gold influences the electrical properties, enabling tunable behavior.
- Synthesized SiGe nanowires are suitable for nano- and quantum-electronic applications.
