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Bipolar Switching Properties of the Transparent Indium Tin Oxide Thin Film Resistance Random Access Memories

Kai-Huang Chen1, Chien-Min Cheng2, Mei-Li Chen3

  • 1Graduate Institute of Electronic Engineering, Cheng Shiu University, Kaohsiung 83347, Taiwan.

Nanomaterials (Basel, Switzerland)
|February 25, 2023
PubMed

Keywords:
RF sputteringbipolar switchingnonvolatileresistance random access memory

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