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Updated: Aug 8, 2025

Laser-induced Forward Transfer of Ag Nanopaste
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Laser printed microelectronics.

Liang Yang1,2,3, Hongrong Hu4, Alexander Scholz4

  • 1Institute of Nanotechnology (INT), Karlsruhe Institute of Technology (KIT), 76128, Karlsruhe, Germany. ygliang@ustc.edu.cn.

Nature Communications
|February 27, 2023
PubMed
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This summary is machine-generated.

Laser printing enables sub-micrometer feature sizes for functional electronic devices using ZnO, Pt, and Ag inks. This novel method eliminates post-processing, paving the way for advanced sensors and bioelectronics.

Area of Science:

  • Materials Science
  • Nanotechnology
  • Electronics Engineering

Background:

  • Printed electronics are crucial for sensors, bioelectronics, and security, but current methods have limitations.
  • Existing printing techniques often result in feature sizes in the tens of micrometers.
  • Post-processing at high temperatures is typically required to enhance material performance.

Purpose of the Study:

  • To introduce a facile laser printing process for fabricating high-resolution functional electronic devices.
  • To demonstrate the capability of laser printing for depositing semiconductor (ZnO) and metal (Pt, Ag) inks.
  • To achieve minimum feature sizes below 1 micrometer without post-processing.

Main Methods:

  • Utilized laser printing with specialized inks for ZnO, Pt, and Ag.

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  • Employed laser-induced hydrothermal synthesis for ZnO printing.
  • Fabricated devices including diodes, memristors, and transistors.

    • Main Results:

    • Achieved minimum feature sizes below 1 micrometer for printed ZnO, Pt, and Ag.
    • Demonstrated functional electronic devices: diodes, memristors, and a physically unclonable function (PUF).
    • Successfully created transistors by combining laser and inkjet printing techniques.
    • Eliminated the need for post-sintering for all printed materials.

    Conclusions:

    • Laser printing offers a versatile and high-resolution method for fabricating advanced electronic devices.
    • The process is compatible with various functional materials, including semiconductors and metals.
    • This technique removes the need for high-temperature post-processing, simplifying device fabrication.