Physical Properties of Candidate X-Ray Detector Material Rb₄Ag₂BiBr₉

Recently, metal halide perovskites have emerged as promising semiconductor candidates for sensitive X-ray photon detection due to their suitable bandgap energies, excellent charge transport properties, and low material cost afforded by their low-temperature solution-processing preparation. Here, we report an improved methodology for single crystal (SC) growth, thermal and electrical properties of a two-dimensional (2D) layered halide material Rb₄Ag₂BiBr₉, which has been identified as a potential candidate for X-ray radiation detection applications. The measured heat capacity for Rb₄Ag₂BiBr₉ implies that there are no structural phase transitions upon cooling. Temperature dependence of thermal transport measurements further suggest remarkably low thermal conductivities of Rb₄Ag₂BiBr₉ that are comparable to the lowest reported in literature. The bulk crystal resistivity is determined to be 2.59×10⁹ Ω·cm from the current-voltage (I-V) curve. Density of trap states are estimated to be ~10¹⁰ cm^-3 using the space-charge-limited-current (SCLC) measurements. The fabricated Rb₄Ag₂BiBr₉-based X-ray detector shows good operational stability with no apparent current drift, which may be ascribed to the 2D crystal structure of Rb₄Ag₂BiBr₉. Finally, by varying the X-ray tube current to change the corresponding dose rate, the Rb₄Ag₂BiBr₉ X-ray detector sensitivity is determined to be 222.03 uCGy^-1cm^-2 (at an electric field of E = 24 V/mm).