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Electrically Tunable Topological Phase Transition in van der Waals Heterostructures.

Jie Li1,2, Ruqian Wu2

  • 1School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China.

Nano Letters
|March 1, 2023
PubMed
Summary
This summary is machine-generated.

We propose a new tunable quantum anomalous Hall (QAH) effect platform using MnBi2Se4 and Bi2Se3 layers. An electric field induces a topological phase transition, paving the way for spintronic and quantum devices.

Keywords:
ferromagneticfirst-principles calculationsquantum anomalous Hall effecttopological phase transitionvan der Waals heterostructure

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Area of Science:

  • Condensed matter physics
  • Materials science
  • Quantum phenomena

Background:

  • The quantum anomalous Hall (QAH) effect is crucial for advanced spintronic and quantum devices.
  • Achieving and controlling the QAH effect in real materials remains a significant challenge.

Purpose of the Study:

  • To propose and investigate a novel van der Waals heterostructure as a tunable platform for the QAH effect.
  • To explore the potential of MnBi2Se4/Bi2Se3 heterostructures for spintronic applications.

Main Methods:

  • Utilizing model Hamiltonian and density functional theory (DFT) simulations.
  • Investigating the electronic band structure and topological properties of the proposed heterostructure.
  • Analyzing the response of the system to an external electric field.

Main Results:

  • The MnBi2Se4/Bi2Se3 heterostructure exhibits a tunable QAH effect.
  • A topological phase transition is observed with an electric field of approximately 0.06 V/Å, indicated by band gap closure and reopening.
  • The heterostructure demonstrates a large topological band gap, perpendicular magnetization, and strong ferromagnetic ordering.

Conclusions:

  • The proposed vdW heterostructure serves as an excellent tunable QAH platform.
  • This work offers a new strategy for the experimental realization and control of the QAH effect.
  • The findings provide valuable physical insights for the development of next-generation quantum devices.