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Updated: Aug 8, 2025

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
Electrically Driven Plasmons in Metal-Insulator-Semiconductor Tunnel Junctions: The Role of Silicon Amorphization
Omer Erez-Cohen1, Olga Brontvein2, Israel Bar-Joseph1
1Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot 7610001, Israel.
Abstract:
We investigate electrically driven plasmon (EDP) emission in metal-insulator-semiconductor tunnel junctions. We find that amorphization of the silicon crystal at a narrow region near the junction due to the applied voltage plays a critical role in determining the nature of the emission. Furthermore, we suggest that the change in the properties of the insulating layer above a threshold voltage determines the EDP spatial properties, from being spatially uniform when the device is subjected to low voltages, to a spotty pattern peaking at high voltages. We emphasize the role of the high-energy emission as an unambiguous tool for distinguishing between EDP and radiative recombination of electrons and holes in the semiconductor.
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