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Low threshold current density and high power InGaN-based blue-violet laser diode with an asymmetric waveguide
Optics Express
|March 2, 2023
Summary
Optimizing InGaN-based blue-violet laser diodes (LD) with asymmetric waveguide structures significantly reduces threshold current and enhances slope efficiency. Fabricated LDs demonstrate high optical output power and efficient performance at room temperature.
Area of Science:
- Semiconductor physics
- Optoelectronics
- Materials science
Background:
- Indium Gallium Nitride (InGaN) based laser diodes (LD) are crucial for optoelectronic applications.
- Waveguide structure design critically impacts LD performance, including threshold current and slope efficiency.
Purpose of the Study:
- To investigate the performance of InGaN-based blue-violet LDs with varying waveguide structures.
- To optimize LD performance by employing an asymmetric waveguide design.
Main Methods:
- Utilized simulation and experimental methods to analyze LD performance.
- Conducted theoretical calculations to predict the impact of waveguide asymmetry.
- Fabricated an InGaN-based LD with a specific asymmetric waveguide structure (80-nm In0.03Ga0.97N lower waveguide, 80-nm GaN upper waveguide).
Main Results:
- Theoretical calculations confirmed that asymmetric waveguides reduce threshold current (Ith) and improve slope efficiency (SE).
- The fabricated LD achieved 4.5 W optical output power at 3 A under continuous wave (CW) operation.
- Demonstrated a low threshold current density (Jth) of 0.97 kA/cm² and a slope efficiency (SE) of 1.9 W/A at a lasing wavelength of 403 nm.
Conclusions:
- Asymmetric waveguide structures are effective in enhancing the performance of InGaN-based blue-violet LDs.
- The fabricated device shows promising results for high-power blue-violet laser applications.
