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Updated: Aug 8, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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Effect of Y-doping on switching mechanisms and impedance spectroscopy of HfO-based RRAM devices

Jiao Bai1, Weiwei Xie1, Dehao Qu1

  • 1Key Laboratory of Intelligent Control and Optimization for Industrial Equipment (Dalian University of Technology), Ministry of Education; School of Control Science and Engineering, Faculty of Electronic Information and Electrical Engineering, Dalian University of Technology, Dalian 116024, People's Republic of China.

Nanotechnology
|March 2, 2023
PubMed

Keywords:
HfO x -based RRAMY-dopingactivation energyimpedance spectroscopyresistive switching

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