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X-Ray Diffraction of Ramp-Compressed Silicon to 390 GPa.

X Gong^1,2, D N Polsin^1,2, R Paul^1,2

¹University of Rochester Laboratory for Laser Energetics, Rochester, New York 14623-1299, USA.

Physical Review Letters

|March 3, 2023

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This study reveals new crystal structures of silicon (Si) under extreme pressure. Silicon forms hexagonal close-packed and face-centered cubic structures at high pressures, extending known stability ranges.

Area of Science:

Materials Science
Condensed Matter Physics
High-Pressure Physics

Background:

Silicon (Si) undergoes various phase transitions under compression.
Understanding these transitions is crucial for materials science and geophysics.

Purpose of the Study:

To investigate the crystal structure of silicon under ramp compression.
To determine the phase boundaries and structural stability of Si at high pressures.

Main Methods:

In situ diffraction measurements using angle-dispersive X-ray scattering.
Ramp compression of silicon samples to pressures between 40 and 389 GPa.

Main Results:

Silicon (Si) was observed to form a hexagonal close-packed (hcp) structure between 40 and 93 GPa.

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At higher pressures, Si transitioned to a face-centered cubic (fcc) structure, stable up to 389 GPa.

The stability range of the hcp phase extended beyond theoretical predictions.

Conclusions:

The study provides new insights into the high-pressure behavior of silicon.
Experimental results challenge existing theoretical models for Si phase transitions.
Identified crystal structures advance the understanding of materials under extreme conditions.