Increasing the Strain Resistance of Si/SiO₂ Interfaces for Flexible Electronics

Understanding the changes that occur in the micro-mechanical properties of semiconductor materials is of utmost importance for the design of new flexible electronic devices, especially to control the properties of newly designed materials. In this work, we present the design, fabrication, and application of a novel tensile-testing device coupled to FTIR measurements that enables in situ atomic investigations of samples under uniaxial tensile load. The device allows for mechanical studies of rectangular samples with dimensions of 30 mm × 10 mm × 0.5 mm. By recording the alternation in dipole moments, the investigation of fracture mechanisms becomes feasible. Our results show that thermally treated SiO₂ on silicon wafers has a higher strain resistance and breaking force than the SiO₂ native oxide. The FTIR spectra of the samples during the unloading step indicate that for the native oxide sample, the fracture happened following the propagation of cracks from the surface into the silicon wafer. On the contrary, for the thermally treated samples, the crack growth starts from the deepest region of the oxide and propagates along the interface due to the change in the interface properties and redistribution of the applied stress. Finally, density functional theory calculations of model surfaces were conducted in order to unravel the differences in optic and electronic properties of the interfaces with and without applied stress.