Related Experiment Video
Updated: Aug 8, 2025

A Method to Manipulate Surface Tension of a Liquid Metal via Surface Oxidation and Reduction
Published on: January 26, 2016
Coating of gallium-based liquid metal particles with molybdenum oxide and oxysulfide for electronic band structure
Mohammad B Ghasemian1,2, Yifang Wang2, Francois-Marie Allioux1,2
1School of Chemical and Biomolecular Engineering, University of Sydney, Sydney, NSW, Australia. m.ghasemian@unsw.edu.au.
Abstract:
Liquid metal (LM) droplets are now used in many applications including catalysis, sensing, and flexible electronics. Consequently, the introduction of methods for on-demand alternating electronic properties of LMs is necessary. The active surface of LMs provides a unique environment for spontaneous chemical reactions that enable the formation of thin layers of functional materials for such modulations. Here, we showed the deposition of n-type MoO and MoOS semiconductors on the surface of EGaIn LM droplets under mechanical agitation to successfully modulate their electronic structures. The "liquid solution"-"liquid metal" interaction resulted in the formation of oxide and oxysulfide layers on the surface of LM droplets. The comprehensive study of electronic and optical properties revealed a decrease in the band gap of the droplets after surface decoration with MoO and MoOS, leading to deeper n-type doping of the materials. This method provides a facile procedure for engineering the electronic band structure of LM-based composites when they are necessary for various applications.
More Related Videos
15:47Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
06:49Radio Frequency Magnetron Sputtering of GdBa2Cu3O7âˆ'ÃŽ ´/ La0.67Sr0.33MnO3 Quasi-bilayer Films on SrTiO3 STO Single-crystal Substrates
Published on: April 12, 2019
Related Concept Videos
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...