Related Experiment Video
Updated: Aug 8, 2025

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Electron-Induced Chirality-Selective Routing of Valley Photons via Metallic Nanostructure
Liheng Zheng1, Zhibo Dang1, Dongdong Ding1
1School of Physics, State Key Lab for Mesoscopic Physics, Academy for Advanced Interdisciplinary Studies, Collaborative Innovation Center of Quantum Matter, and Nano-optoelectronics Frontier Center of Ministry of Education, Peking University, Beijing, 100871, P. R. China.
Abstract:
Valleytronics in 2D transition metal dichalcogenides has raised a great impact in nanophotonic information processing and transport as it provides the pseudospin degree of freedom for carrier control. The imbalance of carrier occupation in inequivalent valleys can be achieved by external stimulations such as helical light and electric field. With metasurfaces, it is feasible to separate the valley exciton in real space and momentum space, which is significant for logical nanophotonic circuits. However, the control of valley-separated far-field emission by a single nanostructure is rarely reported, despite the fact that it is crucial for subwavelength research of valley-dependent directional emission. Here, it is demonstrated that the electron beam permits the chirality-selective routing of valley photons in a monolayer WS2 with Au nanostructures. The electron beam can locally excite valley excitons and regulate the coupling between excitons and nanostructures, hence controlling the interference effect of multipolar electric modes in nanostructures. Therefore, the separation degree can be modified by steering the electron beam, exhibiting the capability of subwavelength control of valley separation. This work provides a novel method to create and resolve the variation of valley emission distribution in momentum space, paving the way for the design of future nanophotonic integrated devices.
Related Concept Videos
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...

