Hexagonal Boron Nitride for Photonic Device Applications: A Review.

Area of Science:

• Materials Science
• Condensed Matter Physics
• Optoelectronics

Background:

• Hexagonal boron nitride (hBN) is a 2D material crucial for graphene applications due to its lattice match and carrier mobility.
• hBN possesses unique optical properties in deep ultraviolet (DUV) and infrared (IR) spectra, stemming from its indirect bandgap and hyperbolic phonon polaritons (HPPs).

Purpose of the Study:

• To review the physical properties and applications of hBN-based photonic devices operating in DUV and IR wavelength bands.
• To discuss the theoretical underpinnings of hBN's indirect bandgap and HPPs.
• To identify future challenges and emerging techniques in hBN fabrication and HPP control.

Main Methods:

• Review of existing literature on hBN properties and photonic device development.
• Theoretical discussion of hBN's bandgap structure and hyperbolic phonon polaritons.
• Examination of fabrication techniques like chemical vapor deposition and transfer methods.

Main Results:

• hBN enables DUV light-emitting diodes and photodetectors due to its bandgap.
• hBN facilitates IR applications such as absorbers/emitters, hyperlenses, and surface-enhanced IR absorption microscopy via HPPs.
• Challenges in hBN fabrication and HPP control are identified.

Conclusions:

• hBN is a versatile material for DUV and IR photonic devices.
• Further research into fabrication and HPP control is necessary for advanced applications.
• This review aids researchers in designing novel hBN-based photonic devices.