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Microstructure Evolution with Rapid Thermal Annealing Time in (001)-Oriented Piezoelectric PZT Films Integrated on
Yingying Wang1,2, Hanfei Zhu2, Yinxiu Xue2
1Key Laboratory for Liquid-Solid Structure Evolution and Processing of Materials (Ministry of Education), School of Materials Science and Engineering, Shandong University, Jinan 250061, China.
Materials (Basel, Switzerland)
|March 11, 2023
Summary
Rapid thermal annealing of lead zirconate titanate (PZT) films on silicon substrates reveals competing effects. Shorter annealing times enhance piezoelectric performance by minimizing nanopores, crucial for piezoelectric micro-electro-mechanical systems (Piezo-MEMS).
Area of Science:
- Materials Science
- Solid State Physics
- Nanotechnology
Background:
- Highly (001)-oriented lead zirconate titanate (PZT) films on (111) silicon substrates offer potential for piezoelectric micro-electro-mechanical systems (Piezo-MEMS) due to silicon's properties.
- Previous work demonstrated high piezoelectric performance in these PZT films, but the underlying annealing mechanism required thorough investigation.
Purpose of the Study:
- To analyze the mechanism behind the high piezoelectric performance of PZT films processed via rapid thermal annealing.
- To investigate the effects of varying annealing times on the microstructure and electrical properties of PZT films on (111) Si.
- To identify the factors contributing to performance degradation at longer annealing durations.
Main Methods:
- Characterization of PZT film microstructure using X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), and Transmission Electron Microscopy (TEM).
- Evaluation of electrical properties, including ferroelectric, dielectric, and piezoelectric responses.
- Systematic variation of rapid thermal annealing times (2, 5, 10, and 15 minutes).
Main Results:
- Increasing annealing time led to the removal of residual lead oxide (PbO) and the proliferation of nanopores.
- The formation of nanopores was identified as the dominant factor causing deteriorated piezoelectric performance.
- The PZT film annealed for the shortest duration (2 min) exhibited the largest transverse piezoelectric coefficient (e).
- Performance degradation in films annealed for 10 min was linked to changes in grain morphology and significant nanopore generation near the interface.
Conclusions:
- The optimal rapid thermal annealing time is critical for maximizing the piezoelectric performance of PZT films on (111) Si.
- Nanopore formation during prolonged annealing negatively impacts piezoelectric properties, limiting applications in Piezo-MEMS.
- Understanding these competing effects allows for tailored processing to achieve desired piezoelectric characteristics.
