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Updated: Aug 7, 2025

Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing
Published on: June 9, 2023
Oxygen Vacancy Mediated Band-Gap Engineering via B-Doping for Enhancing Z-Scheme A-TiO2/R-TiO2 Heterojunction
Changqing Liu1, Chenggang Xu1, Wanting Wang1
1School of Material Science and Engineering, Shaanxi Key Laboratory of Green Preparation and Functionalization for Inorganic Materials, Shaanxi University of Science and Technology, Xi'an 710021, China.
Abstract:
Fabrication of Z-scheme heterojunction photocatalysts is an ideal strategy for solving environmental problems by providing inexhaustible solar energy. A direct Z-scheme anatase TiO2/rutile TiO2 heterojunction photocatalyst was prepared using a facile B-doping strategy. The band structure and oxygen-vacancy content can be successfully tailored by controlling the amount of B-dopant. The photocatalytic performance was enhanced via the Z-scheme transfer path formed between the B doped anatase-TiO2 and rutile-TiO2, optimized band structure with markedly positively shifted band potentials, and the synergistically-mediated oxygen vacancy contents. Moreover, the optimization study indicated that 10% B-doping with the R-TiO2 to A-TiO2 weight ratio of 0.04 could achieve the highest photocatalytic performance. This work may provide an effective approach to synthesize nonmetal-doped semiconductor photocatalysts with tunable-energy structures and promote the efficiency of charge separation.
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