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Interface Engineering Modulated Valley Polarization in MoS2/hBN Heterostructure

Fang Li1, Hui Zhang2, You Li1

  • 1MIIT Key Laboratory of Semiconductor Microstructure and Quantum Sensing, Department of Applied Physics, Nanjing University of Science and Technology, Nanjing 210094, China.

Nanomaterials (Basel, Switzerland)
|March 11, 2023
PubMed
Summary

Interface engineering offers a new method to control valley pseudospin in transition metal dichalcogenides (TMDs). This study reveals a trade-off between photoluminescence and valley polarization, crucial for spintronics and valleytronics device development.

Keywords:
hexagonal boron nitridemolybdenum disulfidephotoluminescence quantum yieldrelaxation timevalley polarization

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