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Interface Engineering Modulated Valley Polarization in MoS2/hBN Heterostructure.

Fang Li1, Hui Zhang2, You Li1

  • 1MIIT Key Laboratory of Semiconductor Microstructure and Quantum Sensing, Department of Applied Physics, Nanjing University of Science and Technology, Nanjing 210094, China.

Nanomaterials (Basel, Switzerland)
|March 11, 2023
PubMed
Summary

Interface engineering offers a new method to control valley pseudospin in transition metal dichalcogenides (TMDs). This study reveals a trade-off between photoluminescence and valley polarization, crucial for spintronics and valleytronics device development.

Keywords:
hexagonal boron nitridemolybdenum disulfidephotoluminescence quantum yieldrelaxation timevalley polarization

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Layered transition metal dichalcogenides (TMDs) exhibit unique spin-valley coupling due to broken inversion symmetry and time-reversal symmetry.
  • Efficient valley pseudospin manipulation is essential for developing advanced microelectronic devices.

Purpose of the Study:

  • To propose and investigate a straightforward method for modulating valley pseudospin using interface engineering.
  • To explore the relationship between photoluminescence quantum yield and valley polarization in TMD heterostructures.

Main Methods:

  • Fabrication of MoS2/hBN and MoS2/SiO2 heterostructures.
  • Steady-state and time-resolved optical measurements, including photoluminescence spectroscopy.
  • Analysis of exciton dynamics and valley polarization.

Main Results:

  • A negative correlation was observed between photoluminescence quantum yield and valley polarization.
  • MoS2/hBN heterostructures showed enhanced luminescence but reduced valley polarization compared to MoS2/SiO2.
  • Exciton lifetime and luminous efficiency were found to correlate with valley polarization.

Conclusions:

  • Interface engineering is a significant factor in tailoring valley pseudospin in two-dimensional systems.
  • The findings provide insights for advancing spintronics and valleytronics devices based on TMDs.
  • Understanding the interplay between optical properties and valley dynamics is key for device optimization.