Utilizing photonic band gap in triangular silicon carbide structures for efficient quantum nanophotonic hardware.

Area of Science:

• Quantum information science
• Materials science
• Nanophotonics

Background:

• Silicon carbide (SiC) is a key platform for quantum information due to its color center defects with long spin coherence and single-photon emission.
• Efficient light collection from SiC emitters is crucial for quantum networking, computing, and sensing applications.
• Recent advances utilize angle-etching for triangular SiC devices, but light propagation in this geometry is not well understood.

Purpose of the Study:

• To investigate the formation of photonic band gaps in triangular silicon carbide structures.
• To provide a guiding principle for developing efficient quantum nanophotonic hardware in silicon carbide.
• To propose novel applications for light management in SiC quantum devices.

Main Methods:

• Theoretical exploration of photonic band gap formation in triangular cross-section structures.
• Analysis of light propagation characteristics within these geometries.
• Proposal of device designs based on the derived principles.

Main Results:

• Demonstration of photonic band gap formation in triangular SiC structures.
• Identification of principles for guiding light propagation in these novel geometries.
• Proposed designs for TE-pass filters, TM-pass filters, and photonic crystal mirrors.

Conclusions:

• Triangular silicon carbide structures offer a promising platform for controlling light propagation.
• Photonic band gaps can be engineered in these structures for efficient light manipulation.
• Proposed filters and mirrors can enhance light collection and mode selection for SiC quantum emitters.