Br vacancy engineering in Cs₃Bi₂Br₉ for photocatalytic NO oxidation under visible light

Photocatalysis using the visible light of the sun is an environmentally friendly method of eliminating the NOx pollutant from the ambient air. Although Cs₃Bi₂Br₉, a semiconductor with a band gap of 2.54 eV, may be a strong absorber of visible light, its photocatalysis towards the abatement of NOx is unknown. In this study, Cs₃Bi_2-xPb_xBr_9-x (0 ≤ x ≤ 0.0789) are used for the photocatalytic oxidation of NOx. A significant NO oxidation efficiency (80%) is observed over Cs₃Bi_2-xPb_xBr_9-x (x = 0.0443) under visible light, which is attributable to the Br vacancy (V_Br) brought about by Pb²⁺ doping. The presence of V_Br increased the ionic selectivity of in the oxidized NO. At higher Pb doping level, two HONOs adsorbed on the V_Br, linked, and then reduced by hot electrons to produce N₂O₂^2-. The di-azo coupling could passivate the activation of NO on the V_Br. This work advances the defect engineering of halide for the photo-driving solid-gas reaction in air.