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Updated: Aug 6, 2025

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

Published on: October 13, 2017

Perovskite quantum dot one-dimensional topological laser.

Jingyi Tian^1,2, Qi Ying Tan^3,4, Yutao Wang^3,4

¹Centre for Disruptive Photonic Technologies, TPI, Nanyang Technological University, 21 Nanyang Link, Singapore, 637371, Singapore. jingyi.tian@ntu.edu.sg.

Nature Communications

|March 15, 2023

Summary

This summary is machine-generated.

Researchers developed a novel topological laser using perovskite quantum dots. This design offers robustness, low threshold, and efficient vertical emission, paving the way for advanced quantum dot lasers.

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Last Updated: Aug 6, 2025

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Published on: October 13, 2017

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Area of Science:

Optics and Photonics
Materials Science
Condensed Matter Physics

Background:

Topological lasers offer robustness against defects and deformations.
Existing topological cavities face challenges with outcoupling, directionality, and fabrication complexity.
These limitations hinder miniaturization and operation at shorter wavelengths.

Purpose of the Study:

To propose a novel topological cavity design for efficient and robust lasers.
To utilize solution-processed perovskite quantum dots as an ultrathin gain medium.
To demonstrate a lithography-free, vertical-emitting, low-threshold, single-mode topological laser.

Main Methods:

Designed a topological cavity based on interface states between two 1D photonic crystals with distinct Zak phases.
Employed few monolayers of all-inorganic cesium lead halide perovskite quantum dots as the gain medium.
Fabricated the laser without lithography, enabling a vertical emission configuration.

Main Results:

Demonstrated a green-emitting, single-mode topological laser with a low threshold.
Showcased robustness against local perturbations, similar to vertical-cavity surface-emitting lasers (VCSELs).
Achieved a lithography-free, vertical-emitting device using an ultrathin gain medium.

Conclusions:

The proposed topological cavity design simplifies fabrication and reduces gain medium thickness.
This architecture is suitable for cost-effective and efficient quantum dot vertical-emitting lasers.
The design holds potential for lasers across the visible spectral region.