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Realizing Electronic Synapses by Defect Engineering in Polycrystalline Two-Dimensional MoS2 for Neuromorphic

Eunho Lee1,2, Junyoung Kim3, Juhong Park3

  • 1Department of Mechanical and Energy Engineering, University of North Texas, Denton, Texas 76203, United States.

ACS Applied Materials & Interfaces
|March 15, 2023
PubMed
Summary
This summary is machine-generated.

Researchers developed sulfur-defect-engineered molybdenum disulfide (MoS2) artificial synaptic devices for neuromorphic computing. These devices exhibit excellent nonvolatile memory and synaptic functions, paving the way for practical 2D transition-metal dichalcogenide (2D TMD) based computing.

Keywords:
memristorneuromorphic computingsolvent-assisted annealingsynaptic devicetransition-metal dichalcogenides

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Computer Engineering

Background:

  • Two-dimensional transition-metal dichalcogenides (2D TMDs) offer unique properties for advanced electronic devices.
  • Neuromorphic computing aims to mimic the human brain's structure and function.
  • Artificial synaptic devices are crucial components for neuromorphic systems.

Purpose of the Study:

  • To fabricate and characterize artificial synaptic devices using sulfur-defect-assisted molybdenum disulfide (MoS2).
  • To investigate the impact of sulfur vacancy engineering on synaptic behavior and memory characteristics.
  • To analyze the working mechanism of these devices for potential neuromorphic applications.

Main Methods:

  • Fabrication of MoS2 films using a sputtering process.
  • Precise sulfur (S) vacancy-engineering for defect control.
  • Comprehensive electrical, physical, and microscopy characterizations to analyze device performance and mechanism.

Main Results:

  • Sputtered MoS2 films without vacancy control showed no synaptic behavior.
  • Sulfur vacancy-controlled MoS2 films exhibited excellent synaptic functions.
  • Devices demonstrated remarkable nonvolatile memory characteristics: high switching ratio (~103), large memory window, and long retention time (~104 s).
  • Synaptic functions like paired-pulse facilitation (PPF) and long-term potentiation/depression (LTP/LTD) were observed.

Conclusions:

  • Sulfur vacancy engineering is a viable strategy for creating high-performance artificial synaptic devices from MoS2.
  • The developed MoS2 synaptic devices are CMOS-compatible, scalable, low-cost, and facile to fabricate.
  • This work provides a guideline for designing practical 2D TMD-based neuromorphic computing systems.