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Ultrafast tunable lasers using lithium niobate integrated photonics.

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Researchers developed a hybrid silicon nitride-lithium niobate laser for frequency-agile, narrow-linewidth applications. This integrated laser enables fast tuning and demonstrates potential for coherent optical ranging, advancing photonic integrated circuits.

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Area of Science:

  • Photonics and Integrated Optics
  • Materials Science
  • Electro-optics

Background:

  • Thin-film lithium niobate (LiNbO3) on insulator has enabled advanced photonic integrated circuits, modulators, and electro-optic devices.
  • While tunable integrated lasers based on LiNbO3 exist, achieving frequency-agile, narrow-linewidth performance has remained a challenge.
  • Existing integration methods often involve chiplet-level assembly, which can introduce losses and complexity.

Purpose of the Study:

  • To develop a frequency-agile, narrow-linewidth integrated laser using a hybrid silicon nitride (Si3N4)-LiNbO3 photonic platform.
  • To demonstrate the capabilities of this hybrid platform for applications such as coherent laser ranging.
  • To overcome limitations of previous LiNbO3-based tunable lasers by improving tuning speed and maintaining narrow linewidth.

Main Methods:

  • Heterogeneous integration of ultralow-loss Si3N4 photonic integrated circuits with thin-film LiNbO3 via direct wafer-level bonding.
  • Achieving narrow-linewidth lasing (3 kHz intrinsic linewidth) through self-injection locking to a laser diode.
  • Utilizing the hybrid resonator mode for fast (12 × 1015 Hz/s), linear, and low-hysteresis electro-optic frequency tuning.

Main Results:

  • Demonstrated a hybrid Si3N4-LiNbO3 platform with low propagation loss (8.5 dB/m).
  • Achieved narrow-linewidth lasing with a fast electro-optic tuning rate.
  • Successfully performed a proof-of-concept coherent optical ranging (FMCW LiDAR) experiment using the hybrid integrated laser.

Conclusions:

  • The hybrid Si3N4-LiNbO3 platform effectively combines the advantages of both materials for advanced photonic devices.
  • This integrated laser platform offers significant potential for applications requiring fast tuning and narrow linewidth, such as coherent LiDAR.
  • Wafer-level direct bonding provides a superior integration approach compared to chiplet-level methods for achieving high-performance photonic circuits.