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Surface modifications by wet oxidation method removing getter layer in crystalline silicon cells.

Geng Zhang1, Genhua Ji1, Jie Bao1

  • 1Jolywood (Taizhou) Solar Technology Co., Ltd. Taizhou 225500 Jiangsu China jigh@jolywood.cn zhangg01@jolywood.cn baoj@jolywood.cn chenc@jolywood.cn justinsim@jolywood.cn duzheren@jolywood.cn.

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Wet oxidation effectively removes phosphorus-rich layers, enhancing gettering in crystalline silicon (c-Si) solar cells. This method improves minority carrier lifetime and boosts photoelectric conversion efficiency (PCE).

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Area of Science:

  • Materials Science
  • Semiconductor Physics
  • Renewable Energy

Background:

  • Reducing impurity atoms in crystalline silicon (c-Si) is crucial for improving solar cell performance by lowering recombination current density (J0).
  • Phosphorus diffusion gettering (PDG) is a common technique for impurity removal, but traditional methods can introduce surface dislocations, hindering effectiveness.
  • Wet oxidation offers a potential solution for surface modification and impurity removal in c-Si fabrication.

Purpose of the Study:

  • To investigate the effectiveness of wet oxidation in removing phosphorus-rich layers (PRL) and modifying surfaces for improved gettering in c-Si.
  • To quantify the impact of wet oxidation on minority carrier lifetime (τeff and τbulk) and recombination current density (J0).
  • To evaluate the effect of wet oxidation on the final photoelectric conversion efficiency (PCE) of c-Si solar cells.

Main Methods:

  • Systematic application of wet oxidation to remove PRL and modify silicon surfaces.
  • Measurement of gettering effectiveness using minority carrier lifetime (τeff and τbulk) in silicon wafers.
  • Comparison of photoelectric conversion efficiency (PCE) between cells fabricated with and without the wet oxidation method.

Main Results:

  • Wet oxidation reduced J0 by 27.0% and increased τeff by 26.3%.
  • The average τbulk in the bulk region increased by 6-14%.
  • Solar cells fabricated using wet oxidation showed a 0.12% improvement in PCE.

Conclusions:

  • Wet oxidation is an effective method for removing PRL and improving surface quality in c-Si solar cell fabrication.
  • The technique significantly enhances gettering effectiveness, leading to improved carrier lifetimes and reduced recombination.
  • Wet oxidation offers a viable strategy to boost the overall photoelectric conversion efficiency of c-Si solar cells.