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Extremely high frequency Schottky diodes based on single GaN nanowires.
K Yu Shugurov1, A M Mozharov1, V V Fedorov1
1Alferov University, Saint-Petersburg, Russia.
Nanotechnology
|March 17, 2023
Summary
Researchers fabricated gallium nitride (GaN) nanowire Schottky diodes. These devices achieved a record high cutoff frequency of 165.8 GHz, showing promise for high-frequency applications.
Area of Science:
- Materials Science
- Electrical Engineering
- Nanotechnology
Background:
- Gallium nitride (GaN) possesses excellent material properties, making it ideal for high-frequency electronic devices.
- Individual nanowires offer unique geometries for device fabrication.
Purpose of the Study:
- To fabricate and characterize Schottky diodes using individual GaN nanowires.
- To investigate the electrical and high-frequency performance of these nanowire-based diodes.
Main Methods:
- Fabrication of ground-signal-ground topology Schottky diodes on individual GaN nanowires.
- Electrical characterization using I-V curves.
- Small-signal frequency analysis (0.1-40 GHz) to determine scattering parameters.
Main Results:
- Electrical characterization revealed ideality factors of 6-9, attributed to nanowire geometry.
- Effective barrier heights were determined to be between 0.25-0.4 eV.
- Record high cutoff frequency of approximately 165.8 GHz was achieved.
Conclusions:
- GaN nanowire Schottky diodes demonstrate potential for high-frequency applications.
- Nanowire geometry influences diode characteristics, such as ideality factor.
- The achieved cutoff frequency highlights the suitability of GaN nanowires for advanced electronic devices.
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