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Related Concept Videos

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

291
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
291

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Bi-Deficiency Leading to High-Performance in Mg3 (Sb,Bi)2 -Based Thermoelectric Materials.

Jing-Wei Li1, Weishu Liu2, Wei Xu3

  • 1State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.

Advanced Materials (Deerfield Beach, Fla.)
|March 17, 2023
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Summary

This study enhances Mg3(Sb,Bi)2 thermoelectric performance by introducing bismuth vacancies (VBi) to mitigate detrimental magnesium vacancies (VMg). This defect tuning optimizes electrical and thermal transport for improved energy conversion efficiency.

Keywords:
Mg3(Sb,Bi)2defect engineeringlattice thermal conductivitythermoelectric materials

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Area of Science:

  • Materials Science
  • Solid State Physics
  • Energy Conversion

Background:

  • Mg3(Sb,Bi)2 is a promising thermoelectric material using earth-abundant elements for near-room temperature applications.
  • Effective thermoelectric performance requires precise control over complex defects and microstructure.
  • Magnesium vacancies (VMg) in Mg3(Sb,Bi)2 have been shown to negatively impact thermoelectric properties.

Purpose of the Study:

  • To mitigate the detrimental electron scattering effect of Mg vacancies (VMg).
  • To synergistically modulate electrical and thermal transport properties through Bi deficiency.
  • To enhance the overall thermoelectric performance of Mg3(Sb,Bi)2.

Main Methods:

  • Introduced bismuth vacancies (VBi) into the Mg3(Sb,Bi)2 structure.
  • Utilized positron annihilation spectrometry to analyze defect behavior.
  • Employed Cs-corrected scanning transmission electron microscopy for microstructural investigation.

Main Results:

  • Bi deficiency induced VMg coalescence, weakening electron scattering from intrinsic VMg.
  • Enhanced phonon scattering was observed due to the introduced defects.
  • Achieved a peak thermoelectric figure of merit (zT) of 1.82 at 773 K and 11.3% conversion efficiency.

Conclusions:

  • Tuning the defect combination, specifically by introducing Bi deficiency, is an effective strategy.
  • This approach successfully mitigates negative scattering effects and enhances thermoelectric performance.
  • Demonstrates a feasible method for improving Mg3(Sb,Bi)2 as an emerging thermoelectric material.